IOSR-JAP   Volume-14 ~ Issue-3 ~ May – Jun. 2022

ABSTRACT: In the experimental search for the light Higgs boson, we considered a new signature of the charged Higgs boson, pp → H±h → W±hh, which is almost background free as the promising to study of supersymmetry at the LHC with both energy of 13 TeV and 14 TeV. In the framework of the MSSM model we used the latest parameter space, which is consistent with both the experimental constraints obtained at the LHC and theoretical calculations. In the surviving regions with the help of Pythia 8.3 and Feynhiggs programs it was found that production cross sections, σ(pp → H±h), and Branching Ratios, BR(H± → W±h), are the largest at Benchmark Points 4 and 14 correspondingly. The corresponding mass distributions and kinematical cuts of the lightest, h, and charged Higgs boson, H±, were obtained..

Keywords: Higgs boson; MSSM model.

[1]. Heinemeyer, S. et al. A 96 GeV Higgs Boson in the 2HDM plus Singlet, arXiv:2112.11958 [hep-ph]
[2]. CMS Collaboration. Search for a standard model-like Higgs boson in the mass range between 70 and 110 GeV in the diphoton final state in proton-proton collisions at = 8 and 13 TeV. Phys. Lett. B 793, pp. 320 – 347 (2019).
[3]. Arhrib, A. et al. Identifying a light charged Higgs boson at the LHC Run II. Phys. Lett. B 774,591-598 (2017), arXiv:1706.01964 [hep-ph].
[4]. Branco, G.C. et al. Theory and phenomenology of two-Higgs-doublet models. Phys. Rept. 516, 1–102 (2012), arXiv:hep-ph/1106.0034.
[5]. Gunion, J.F. and Haber, H.E. Errata for Higgs Bosons in Supersymmetric Models: I, II and III. Nucl. Phys. B272 (1986) 1; (E), hep-ph/9301205.

ABSTRACT: This article gives a method to find the properties of a Si (100) MOS device, given the transverse and longitudinal electron effective masses in the semiconductor and its bandgap, without fabricating the MOS device. The study also highlights a significant scientific concept of physics that the electron effective masses in semiconductors and insulators are not only related to the mobility through drift velocity, but are also related to the intrinsic Fermi energy below the conduction band of the semiconductor through the relation dE/E equals dm/m, where dE is the differential kinetic energy of the moving electron, E is the semiconductor bandgap, dm is the effective mass of the electron and m is the free electron mass

Keywords: Metal-Oxide-Semiconductor, Silicon, Intrinsic defects, Fowler-Nordheim tunnelling

[1]. R.K. Chanana, "A new method for calculating charged deep level defects density in doped semiconductors from the band offsets of MIS device interfaces", IOSR-J. Appl. Phys., 8(4), 53-56 (2016).
[2]. R.K. Chanana, "Intrinsic Fermi level and charged intrinsic defects density in doped semiconductors from the band offsets of MIS device interfaces", IOSR-J. Appl. Phys., 9(6), 1-7 (2017).
[3]. R.K. Chanana, "Linear model for the variation of semiconductor bandgap with high temperature for high temperature electronics", IOSR-J. Electrical and Electronics Engg., 16(6), 5-8 (2021).
[4]. C. Kittel, "Semiconductor Crystals", in Introduction to Solid State Physics, 5th edition, John Wiley and Sons, Inc., New York, Wiley Eastern Limited, New Delhi, pp.207-248, 1976.
[5]. D.J. DiMaria, M.V. Fischetti, E. Tierney, "Direct observation of the threshold for electron heating in silicon dioxide", Physical Review Letters, 56(12), 1284-1286 (1986).

ABSTRACT: Three different physical quantities: Nature Quantities (such as a piece of space or time); Associated Quantities (such as the dimension and duration of an object or event); and Measured Quantities (such as X number of minutes and Y number of meters) are clearly defined and compared. Also, arithmetic operations including addition, subtraction, multiplication and division applied on Associated Quantities (such as M/S and M1M2/R2) and Measured Quantities (such as m/s and Kgm/s2) are interpreted. Furthermore, commutativity, associativity and distributivity of Associated Quantities and Measured Quantities are derived.

Keywords: Arithmetic Operations, Addition, Subtraction, Multiplication, Division, Commutativity, Associativity and Distributivity, Mathematical Physics

[1]. Edward T. H. Wu. "Mathematical Methodologies in Physics and Their Applications in Derivation of Velocity and Acceleration Theories". Pure and Applied Mathematics Journal 2015; 4(4): 147-154.
[2]. Edward T. H. Wu. "Gravitational Waves, Newton's Law of Universal Gravitation and Coulomb's Law of Electrical Forces Interpreted by Particle Radiation and Interaction Theory Based on Yangton & Yington Theory". American Journal of Modern Physics. Vol. 5, No. 2, 2016, pp. 20-24. doi:10.11648/j.ajmp.20160502.11.
[3]. Edward T. H. Wu. "Mathematical Methodologies in Physics and Their Applications in Derivation of Velocity and Acceleration Theories". Pure and Applied Mathematics Journal 2015; 4(3): 75-79.
[4]. Edward T. H. Wu. "What Are the Truths of Gravity and General Relativity." IOSR Journal of Applied Physics (IOSR-JAP), 14(01), 2022, pp. 25-51..

ABSTRACT: Degree based topological indices of chemical graphs are computed from classical formula and M-polynomial. M-polynomial of nine basic topological indices are investigated by many researchers for nanostructures. Reduced topological indices are derived from classical formula of topological indices. In this paper some reduced topological indices of TUC4C8[m,n] carbon nanotubes are investigated by M-polynomial.

Keywords: Carbon nanotube, M-polynomial, reduced topological index, reduced Zagreb indices, topological index, Zagreb index

[1]. D.Y.Shin, S.Hussain, F.Afzal, C.Park, D.Afzal, and M.R.Farahani, Closed formulas for some new degree based topological descriptors using M-polynomial and Boron triangular nanotube, frontiers in Chemistry, 2021, Vol.8, Article No.613873.
[2]. Z.Raza, M.E.K.Sukait, M-polynomials and degree based topological indices of some nanostructures, Symmetry, 12(5), 2020, 831.
[3]. I.Gutman, Some basic properties of Somber indices, Open Journal of Discrete Applied Mathematics, 4(1), 2021, 1-3.
[4]. J.Asadpour, R.Mojarad, and L.Shafikhani, Computing some topological indices of nanostructures, Digest Journal of Nanomaterials and Biostructures, Vol.6, No.3, 2011, 937-941.
[5]. S.Hussain,F.Afzal,D.Afzal, and D.K.Thapa, The study about relationship of direct form of topological indices via M-polynomial and computational analysis of Dexamethasone,Hindavi, Journal of Chemistry, Volume 2022,Article ID 4912143,1-10