ABSTRACT: Low-dimensional materials have attracted considerable scientific interest because spatial confinement at the nanoscale can produce quantum-mechanical properties that differ substantially from those observed in conventional bulk materials. Their reduced dimensionality, large surface-to-volume ratio, modified electronic interactions, and sensitivity to structural perturbations provide opportunities for tailoring electronic, magnetic, optical, and.....
Keywords: Low-dimensional materials; Quantum mechanics; Density Functional Theory; Electronic structure; Defect engineering; Strain engineering; First-principles calculations
[1].
Akinwande, D., Huy, G. T., Wang, S., Xia, F., Petrone, N., Lee, Y. T., Koppens, F. H. L., Mueller, T., Xie, L., & Avouris, P. (2019). Graphene and two-dimensional materials for silicon technology. Nature, 573, 507–518.
[2].
Balendhran, S., Walia, S., Ahmed, T., Sriram, S., Bhaskaran, M., & Strano, M. S. (2015). Progress and perspectives in 2D transition metal chalcogenide-based optoelectronics. Advanced Functional Materials, 25(24), 3734–3744.
[3].
Bardeen, J., & Brattain, W. H. (1948). The transistor, a semiconductor triode. Physical Review, 74(2), 230–231.
[4].
Berkelbach, T. C., Hybertsen, M. S., & Reichman, D. R. (2013). Theory of neutral and charged excitons in monolayer transition metal dichalcogenides. Physical Review B, 88(4), 045318.
[5].
Chhowalla, M., et al. (2024). Critical challenges in the development of electronics based on two-dimensional transition metal dichalcogenides. Nature Electronics, 7, 638–645. https://doi.org/10.1038/s41928-024-01210-3