IOSR-JAP   Volume-11 ~ Issue-4 ~ July-August 2019

ABSTRACT: This paper evaluated and compared the performance of two recently developed optimization algorithms: Moth-Flame Optimization (MFO) and Antlion Optimization (ALO) using parameter extraction of a Three Diode Model (TDM) of a photovoltaic module. These techniques were equally recently reported to have good performance. However, it is imperative to know the best method among them in terms of accuracy, execution time and speed of convergence for a given optimization problem. Experiments were conducted to obtain several values for the PV module's currents and voltages. Part of the data were used in optimizing the TDM parameters by the two optimization..........

Keyword: Ant-lion Optimization (ALO), Moth Flame Optimization (MFO), Three Diode Model (TDM).

[1]. K. Bouzidi, M. Chegaar, and M. Aillerie, "Solar cells parameters evaluation from dark I-V characteristics," Energy Procedia, vol. 18, no. 1, pp. 1601–1610, 2012.
[2]. M. A. Green, Y. Hishikawa, A. W. Y. Ho-Baillie, E. D. Dunlop, and D. H. Levi, "Solar cell efficiency tables ( version 51 )," Wiley Prog. Photovolt, no. November 2017, pp. 3–12, 2018.
[3]. F. Z. Zerhouni, M. H. Zerhouni, M. T. Benmessaoud, A. B. Stambouli, and O. E. M. Naouer, "Proposed Methods to Increase the Output Efficiency of a Photovoltaic ( PV ) System," Acta Polytchnica Hungarica, vol. 7, no. 2, pp. 55–70, 2010.
[4]. W. Li et al., "Six-parameter electrical model for photovoltaic cell / module with compound parabolic concentrator," Sol. Energy, vol. 137, pp. 551–563, 2016.
[5]. V. Jack, Z. Salam, and K. Ishaque, "Cell modelling and model parameters estimation techniques for photovoltaic simulator application : A review," Appl. Energy, vol. 154, no. September, pp. 500–519, 2015..

ABSTRACT: A theory of current oscillations in impurity semiconductors with two types of charge carriers is constructed, when the equilibrium ratios of the concentrations of electrons and holes are determined by the ratio of the characteristic frequencies of electrons and holes. Analytical formulas for the external electric field and for the frequency arising inside the impurity semiconductor are obtained. The growth increment of arising waves has been determined. When a current oscillates in a circuit, a semiconductor impedance is calculated. It is indicated that when a capacitive character appears in a circuit, the value of which is equal to the ohmic resistance in the circuit, the frequency of current oscillation mainly depends on the frequency of electron capture. The electric field during the radiation of a sample mainly depends on the frequency of the capture of electrons by impurity centers.

Keywords – Frequency, increment, oscillations, capture, recombination, generation

[1]. M.I. Iglitsyn, E.G. Pel, L. Ya. Pervova and V.I. Fistul. The instability of the electron-hole plasma of a semiconductor, due to the
nonlinearity of the current-voltage characteristics. FTT, 1966, vol. 8, no. 12, p. 3606-3614,1966
[2]. E.R. Hasanov, RasoulNezhadHosseyn, Az.Panahov and Ali IhsanDemirel, "Instability in Semiconductors with Deep Traps in the
Presence of Strong ( H  C)   ,Advanced Studies in Theoretical Physics., Year 2011, Vol. 5 N 1, p.25-30
[3]. E R Hasanov, A I Demirel, A Z Panahov Radiations of electron-type conductivity environment in electric and magnetic field
(Advanced Studies in Theoretical Physics) Vol 6, №22, p 1077-1086 (2012)
[4]. E R Hasanov, A Z Panahov, A I Demirel High Frequency Energy Radiation of n-Type Semiconductors at Constant Electric and
Magnetic Field. Adv. Studies Theor. Phys. Vol.7, 2013, N 21, pp. 1035-1042.
[5]. E R Hasanov , R A Hasanova External and Internal Instability the Medium Having Electron Type Conductivity (JOSR Journal of
Applied Physics) Vol 10, p 18 (2018).

ABSTRACT: This research details the experimental results of MoSe2/ZrSe2 van der Waals (vdW) heterostructure tunneling field-effect transistor (TFET) using Ti-doped MoSe2 as source material. The electrical characteristics of MoSe2 metal-oxide-semiconductor field-effect transistors were investigated and the Ti doped MoSe2 exhibited strong p-type conduction. The fabricated MoSe2/ZrSe2 vdW heterostructure TFET successfully implemented transistor operation, and the asymmetrical diode properties manifested that the band alignment of the MoSe2/ZrSe2 vdW heterostructure TFET could be modulated from Type-II to Type-III by the back-gate bias. These results verified that the Ti-doped MoSe2 is an appropriate p-type two-dimensional material for designing vdW heterostructure TFET

Keywords – Two-dimensional materials, Tunneling field-effect transistor, Molybdenum diselenide, Zirconium diselenide, Substitutional doping

[1]. A. M. Ionescu and H. Riel, Tunnel field-effect transistors as energy-efficient electronic switches, Nature, 479, 2011, 329-337.
[2]. E. Memisevic, J. Svensson, E. lind, and L.-E. Wernersson, Vertical Nanowire TFETs With Channel Diameter Down to 10 nm and
Point SMIN of 35 mV/Decade, IEEE Electron Device Letters, 39(7), 2018, 1089-1091.
[3]. S. Agarwal and E. Yablonovitch, Band-Edge Steepness Obtained From Esaki/Backward Diode Current-Voltage Characteristics,
IEEE Transactions on Electron Devices, 61(5), 2014, 1488-1493.
[4]. B. Radisavljevic, A. Radenovic, J. Brivio, V. Giacometti, and A. Kis, Single-layer MoS2 transistors, Nature Nanotechnology, 6,
2011, 147-150.
[5]. W.-L. Zhang, Improvement of Performance of HfS2 Transistors Using a Self-Assembled Monolayer as Gate Dielectric, Chinese
Physics Letters, 36(6), 2019, 067301.