iosr-JVSP   Volume-8 ~ Issue-2 ~ March-April 2018

ABSTRACT: An Energy Efficient Multiplier Is Proposed And Implemented With Less Area, Minimum Delay, And Less Amount Of Power Dissipation. The Left To Right Truncated Multiplier Was Proposed Earlier. In That Design, N-Bit Multiplier Produces 2N Bit Partial Products, But These 2N Bit Partial Products Will Be Divided Into 2N-(N/2) Bits And N/2 Bits. Thus Finally 2N Bits Are Produced By Addition Of Above Bits Using Ripple Carry Adder. The Proposed Multiplier Was Implemented Without Any Truncation And Addition Method, And Designed As A General Array Multiplier Structure. A Smaller On-The-Fly Conversion (OTFC) Circuit Is Added At The End Of The Circuit............

Keywords: Addition, On-The-Fly Conversion, Left-To-Right Multiplier, Right-To-Left Multiplier, Truncation

[1]. Wen Yan, Milos D. Ercegovac, He Chen "An Energy Efficient Multiplier With Fully Overloaded Partial Products Reduction And Final Addition "" IEEE Trans. Circuits Syst. I, Regular Papers Express Briefs, 2016.
[2]. H. J. Ko And S. F. Hsiao, "Design And Application Of Faithfully Rounded And Truncated Multipliers With Combined Deletion, Reduction, Truncation, And Rounding," IEEE Trans. Circuits Syst. II, Express Briefs, Vol. 58, No. 5, Pp. 304–308, 2011.
[3]. S. Das And S. P. Khatri, "Generation Of The Optimal Bit-Width Topology Of The Fast Hybrid Adder In A Parallel Multiplier," In Proc. IEEE Int. Conf. Integr. Circuit Des. Technol., Pp. 1–6, May 2007.
[4]. M. D. Ercegovac And T. Lang, "On-The-Fly Conversion Of Redundant Into Conventional Representation," IEEE Trans. Comput., Vol. C-36, No. 7, Pp. 895–897, 1987.
[5]. A. Vazquez And E. Antelo, "Area And Delay Evaluation Model For CMOS Circuits," Internal Report, Univ. Santiago De Compostela (Spain), Jun. 2012.

ABSTRACT: In this paper, the impact of GaN-based High Electron Mobility Transistor (HEMT) is reported. The device is having two channel layers of GaN (Gallium Nitride) and InAlGaN (Indium Aluminium Gallium Nitride). The device is simulated by the TCAD, Silvaco Software in 2D format. The results so obtained have proved the high performance on the parameters like electric potential, concentration of electron, break-down voltage and transconductance (gm). The simulated device and obtained results are compared with the structure of AlGaN/GaN HEMT. The major benefit of the simulated device is the reduced leakage current. The mole fraction of Aluminium in InAlGaN has been optimized to create the best performing device.

Keywords: Mole Fraction, GaN/AlGaN, Breakdown Voltage, High Electron Mobility Transistor (HEMT)

[1] https://en.wikipedia.org/wiki/Gallium_nitride
[2] Siert, P. and Krimmel, E, (2004) Silicon: Evolution and Future of a Technology.Springer, Berlin.
[3] Adler, M., Owyang K.B., Baliga, B.J. and Kokosa, R. (1984) The Evolution of Power Device Technology. IEEETransactions on Electron Devices, 31, 1570-1591. https://doi.org/10.1109/T-ED.1984.21754
[4] Yole Développement (2014) Wide Band Gap Power Electronics: A Path toward CO2 Emission Decrease. Technical Report, Yole Développement, Villeurbanne.
[5] Ozpineci, B., Tolbert, L.M.S., Islam, K. and Chinthavali, M. (2003) Comparison of Wide Bandgap Semiconductors for Power Applications. European Conference on Power Electronics and Applications, Toulouse, 2-4 September 2003, 2-4.

ABSTRACT: There are many methods available for secret data hiding and transfer, among which steganography stands out in various aspects. Steganography is used for secret data transfer in a cover object which may be an image, video, audio, text or a network protocol, with an additional advantage of even hiding the existence of such a secret data. Selfies are commonly trending via social media nowadays and can be utilized for image steganography in many cases. A study of face detection using Viola-Jones object tracking method and then embedding secret image into it based on Discrete Wavelet Transform(DWT) technique is executed in MATLAB. Finally, using the steganographic characteristics such as the MSE (Mean Square Error) and PSNR (Peak Signal-to-Noise Ratio) values, the different input cover image formats like JPG, PNG, BMP with secret images of JPG, BMP, PNG formats are analyzed..

Keywords: Discrete Wavelet Transform(DWT), MSE (Mean Square Error), PSNR (Peak Signal-to-Noise Ratio) Steganography, Viola-Jones object tracking method

[1]. C.P. Sumathi, T. Santanam, G. Umamaheswari,"A Study of VariousSteganographic Techniques Used for Information Hiding". International Journal of Computer Science and EngineeringSurvey(IJCSES), Vol.4, No.6, December 2013.
[2]. ShashikalaChannalli, Ajay Jadhav,"Steganography- An art of Hiding Data". International Journal on Computer Science and Engineering, Vol.1(3), 2009, 137-141.
[3]. T. Morkel,J.H.P. Eloff, M.S. Olivier, "An Overview of Image Steaganography". Information and Computer Security Architecture (ICSA) Research Group Department of Computer Science University of Pretoria, 0002, Pretoria, South Africa.
[4]. SnehalManjare, Dr.S.R.Chougule, "Steganography using Concept of Skin Tone Detection". International Journal of Scientific Research Engineering & Technology (IJSRET), Volume 2 Issue4 pp 189-193 July 2013.
[5]. ManishaKude, ManjushaBorse, "Skin tone Detection Based Steganography Using Wavelet Transform", International Conference on Automatic Control and Dynamic Optimization Techniques(ICACDOT), 2016..