Abstract: Metal Oxide Semiconductor Field Effect Transistor (MOSFET) has been of crucial importance for the
progress of nanoelectronics technology. Silicon on insulator (SOI), a new technology of MOSFET transistors,
helps in miniaturization and decrease of short channel effects. A two dimension device simulation is performed
to investigate the kink effect of partially depleted SOI MOSFET using Silvaco TCAD tools.This paper
demonstrates a method for reducing the kink effect present in the current-voltage output characteristics of
partially depleted SOI MOSFET. In this method, the thickness of gate oxide for the device is reduced. Results
obtained through simulations indicate that the proposed method, while still maintaining major advantages
obtained by conventional SOI structure, can eliminate the kink effect.
Key Word: MOSFET, Silicon on Insulator, PD SOI, Silvaco TCAD, Kink Effect
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