Abstract: This research study demonstrates that a higher surface field-effect mobility of electrons can be obtained in a n-channel 4H-SiC-MOSFET device by fabricating it on the (11 0) epitaxial surface. The article also gives a method to find the properties of a MOS device on any parabolic semiconductor, given the transverse and longitudinal electron effective masses in the semiconductor and its bandgap, without fabricating the MOS device. Finally, the study also highlights a significant scientific concept of physics that, the electron effective masses in semiconductors and insulators are not only related to the mobility through drift velocity, but are also related to the intrinsic Fermi energy below the conduction band of the semiconductor through the relation dE/E equals dm/m, where dE is the differential kinetic energy of the moving electron, E is the semiconductor bandgap, dm is the effective mass of the electron in the material and m is the free electron mass.
Keywords: Metal-Oxide-Semiconductor, Silicon Carbide, Intrinsic Defects
[1]. R.K. Chanana, "A new method for calculating charged deep level defects density in doped semiconductors from the band offsets of MIS device interfaces", IOSR-J. Appl. Phys., 8(4), 53-56 (2016).
[2]. R.K. Chanana, "Intrinsic Fermi level and charged intrinsic defects density in doped semiconductors from the band offsets of MIS device interfaces", IOSR-J. Appl. Phys., 9(6), 1-7 (2017).
[3]. R.K. Chanana, "Linear model for the variation of semiconductor bandgap with high temperature for high temperature electronics", IOSR-J. Electrical and Electronics Engg., 16(6), 5-8 (2021).
[4]. C. Kittel, "Semiconductor Crystals", in Introduction to Solid State Physics, 5th edition, John Wiley and Sons, Inc., New York, Wiley Eastern Limited, New Delhi, pp.207-248, 1976.
[5]. Richard Williams, "Photoemission of electrons from silicon into silicon dioxide", Physical Review, 140(2A), 569-575 (1965)..
