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| Paper Type | : | Research Paper |
| Title | : | Study of Dielectric Properties of Nano-crystalline Mn-Zn Ferrite |
| Country | : | India |
| Authors | : | Sunita Bhagwat*, Pratibha Rao |
| : | 10.9790/4861-0310106 ![]() |
Abstract: The ac conductivity σ and dielectric properties (dielectric constant ', dielectric loss '' and loss
tangent tan δ) were measured as a function of frequency between 100 Hz and 20 MHz for the mixed ferrites
ZnxMn1-xFe2O4 (where x = 0.2 to 0.8), synthesized by solid-state route. The ac conductivity σ below 1 MHz
seems to be nearly frequency independent for all compositions; and above these frequency ranges, σ sharply
increases until it reaches a maximum value. The relaxation time (τ) was found to be in the range 0.3x10-5 –
1.5x10-5sec from the hopping frequency. The dielectric constant for these ferrites is approximately inversely
proportional to the square root of the resistivity. The electrical conduction mechanism was explained in terms of
the electron hopping model. The formation of spinel structure and crystalline size was confirmed using X-ray
diffraction (XRD) technique. Morphology of the samples was studied using Scanning Electron Microscopy
(SEM).
Keywords: Solid-state route; spinel ferrite; dielectric properties; ac conductivity
Keywords: Solid-state route; spinel ferrite; dielectric properties; ac conductivity
[1] Y. Chen, J. E. Snyder, C. R. Schwichtenberg, K. W. Dennis, R. W. McCallum, D. C. Jiles, Metal bonded Co-ferrite for torque sensor
applications, IEEE Transactions on Magnetics, 35, 1999, 3652-3654.
[2] N. Iftimie, E. Rezlusu, P. D. Popa, N. Reslescu, Gas sensitivity of nano-crystalline nickel ferrite, Journal of Optoelectronics and
Aadvance Materials, 8, 2006, 1016-1018.
[3] M. Sugimoto, The past, present and future of ferrites, Journal of American Ceramics Society, 82, 1999, 269-280.
[4] R. Lebourgeois, C. Coillot, Mn-Zn ferrites for magnetic sensor in space application, Journal of Applied Physics, 103, 2008, 07E510-
513.
[5] P. B. A. Fechine, R. S. T. Moretzsohn, R. C. S. Costa, J. Derov, J. W. Stewart, A. J. Drehman, C. Junqueira, A. S. B. Sombra,
Dielectric ferrite resonator antennas, Microwave and Optical Technology Letters, 50, 2008, 2852–2857.
[6] H. P. Klug and L. E. Alexander, X-ray Diffraction Procedures for Polycrystalline and Amorphous Materials ( John Wiley, New York, 1974) 491.
[7] D. J. Kim, Lattice parameters, ionic conductivities and solubility limits in fluorite-structure MO2 oxide [M = Hf4+, Zr4+, Ce4+, Th4+, U4+] solid solutions, Journal of American Ceramics Society, 72, 1989, 1415-16.
[8] H.M. Abdelmoneim, Dielectric properties of TixLi1-xLa0.1Fe1.9O4 ferrite thin films, Indian Jornal of Pure and Appied. Physics, 48, 2010, 562-570.
[9] G. Ranga Mohan, D. Ravinder, A.V. Ramana Reddy and B.S. Boyanov, Dielectric properties of polycrystalline mixed nickel–zinc
ferrites, Materials Letters, 40, 1999, 39-45.
[10] D.El. Kony, Dielectric Relaxation in Al-substituted Ni-Cd spinel ferrites, Egyptcian Journal of Solids, 27, 2004, 285-297.
applications, IEEE Transactions on Magnetics, 35, 1999, 3652-3654.
[2] N. Iftimie, E. Rezlusu, P. D. Popa, N. Reslescu, Gas sensitivity of nano-crystalline nickel ferrite, Journal of Optoelectronics and
Aadvance Materials, 8, 2006, 1016-1018.
[3] M. Sugimoto, The past, present and future of ferrites, Journal of American Ceramics Society, 82, 1999, 269-280.
[4] R. Lebourgeois, C. Coillot, Mn-Zn ferrites for magnetic sensor in space application, Journal of Applied Physics, 103, 2008, 07E510-
513.
[5] P. B. A. Fechine, R. S. T. Moretzsohn, R. C. S. Costa, J. Derov, J. W. Stewart, A. J. Drehman, C. Junqueira, A. S. B. Sombra,
Dielectric ferrite resonator antennas, Microwave and Optical Technology Letters, 50, 2008, 2852–2857.
[6] H. P. Klug and L. E. Alexander, X-ray Diffraction Procedures for Polycrystalline and Amorphous Materials ( John Wiley, New York, 1974) 491.
[7] D. J. Kim, Lattice parameters, ionic conductivities and solubility limits in fluorite-structure MO2 oxide [M = Hf4+, Zr4+, Ce4+, Th4+, U4+] solid solutions, Journal of American Ceramics Society, 72, 1989, 1415-16.
[8] H.M. Abdelmoneim, Dielectric properties of TixLi1-xLa0.1Fe1.9O4 ferrite thin films, Indian Jornal of Pure and Appied. Physics, 48, 2010, 562-570.
[9] G. Ranga Mohan, D. Ravinder, A.V. Ramana Reddy and B.S. Boyanov, Dielectric properties of polycrystalline mixed nickel–zinc
ferrites, Materials Letters, 40, 1999, 39-45.
[10] D.El. Kony, Dielectric Relaxation in Al-substituted Ni-Cd spinel ferrites, Egyptcian Journal of Solids, 27, 2004, 285-297.
- Citation
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Abstract: Various methods have been developed in the manufacture of Poly (vinylidene fluoride) (PVDF) thin
films such as coating, spreading, evaporation and calendaring. The method of making this film certainly has
many advantages and disadvantages as in the case of operational processes and also the cost of the required
treatment. In this paper, an alternative method to preparation of PVDF thin films has been done through the
development calendaring method by using roll hot press. The advantages of roll hot press are simple in terms of
operation and relative low cost. PVDF thin film has been produced for several temperatures of roll hot press
with several different thicknesses. The PVDF thin films are characterized using X-Ray Diffraction and IR
spectra. In addition to determine the surface resistivity are caried out using I-V meter. We found that an
increase in β fraction of PVDF thin films with increasing temperature at fixed film thickness, while the surface
resistivity of PVDF film are decreased. This shown that the piezoelectric property of PVDF films has been
improved.
Keywords: β fraction, piezoelectric, PVDF film, Roll hot press, Surface resistivity
Keywords: β fraction, piezoelectric, PVDF film, Roll hot press, Surface resistivity
[1] Lovinger, A.J," Poly(Vinylidene Fluoride)" in Development in Crystalline Polymers, edited by David Clifford Bassett, London,
Applied Science Publisher, 1982, pp. 195-261.
[2] C.L. Radiman, Kimia Polimer, Bandung : Penerbit ITB, 2004, pp.5-20
[3] J.F. Mano, V. Sencadas, A.M. Costa, S.L. Mendez, Mater. Sci. Eng. A 3702004) 336
[4] V. Sencadas, V.M. Moreira, S. Lanceros-Mendez, A. S. Pouzada and R. Gregorio Jr. - to- Transformation on PVDF Films
Obtained by Uniaxial Stretch, Materials Science Forum Vols. 514-516 (2006) pp 872-876
[5] Yuji Yoshihada, Katsunori, Ishizaki, Toshihisa Horiuci and Kazumi Matsushige, Molecular Orientation and Phase Transition in
Vinylidene Fluoride Telomer Evaporated Thin Films, Polymer Physics in Japan, vol. 36, 1993
[6] Vijaykumar R. P.,1 Devang. V. Khakhar,1 Ashok Misra2, Studies on a to b Phase Transformations in Mechanically Deformed PVDF Films, Journal of Applied Polymer Science, Vol. 117, 3491–3497 (2010)
[7] Kwang Man Kim, Effect Evaporation Temperature on the Crystals, Korean J. Chem. 20(5), 2003, 934-941.
[8] Diana Sari, Pembuatan dan Karakterisasi Piezoelektrik PVDF dengan metode Spin Coating dalam pelarut N, N-Dimethyl cetamide
dan N, N-Dimethyl formalide, Thesis ITB, 2004.
[9] Y. Liu, Y. Sun, F. Zeng, Y. Chen, Q. Li, B. Yu, W. Liu, Morphology, Crystallization, Thermal, and Mechanical Properties of
Poly(vinylidene fluoride) Films Filled with Different Concentrations of Polyhedral Oligomeric Silsesquioxane, Polymer Engineering
and Science, 2012. DOI 10.1002/pen.
[10] B. P. Mahale, D. Bodas, S. A. Gangal, "Development of low-cost poly(vinyldifluoride ) sensor for low- pressure application," Micro & Nano Letters, 2011, Vol. 6 (7), pp. 40-542.
Applied Science Publisher, 1982, pp. 195-261.
[2] C.L. Radiman, Kimia Polimer, Bandung : Penerbit ITB, 2004, pp.5-20
[3] J.F. Mano, V. Sencadas, A.M. Costa, S.L. Mendez, Mater. Sci. Eng. A 3702004) 336
[4] V. Sencadas, V.M. Moreira, S. Lanceros-Mendez, A. S. Pouzada and R. Gregorio Jr. - to- Transformation on PVDF Films
Obtained by Uniaxial Stretch, Materials Science Forum Vols. 514-516 (2006) pp 872-876
[5] Yuji Yoshihada, Katsunori, Ishizaki, Toshihisa Horiuci and Kazumi Matsushige, Molecular Orientation and Phase Transition in
Vinylidene Fluoride Telomer Evaporated Thin Films, Polymer Physics in Japan, vol. 36, 1993
[6] Vijaykumar R. P.,1 Devang. V. Khakhar,1 Ashok Misra2, Studies on a to b Phase Transformations in Mechanically Deformed PVDF Films, Journal of Applied Polymer Science, Vol. 117, 3491–3497 (2010)
[7] Kwang Man Kim, Effect Evaporation Temperature on the Crystals, Korean J. Chem. 20(5), 2003, 934-941.
[8] Diana Sari, Pembuatan dan Karakterisasi Piezoelektrik PVDF dengan metode Spin Coating dalam pelarut N, N-Dimethyl cetamide
dan N, N-Dimethyl formalide, Thesis ITB, 2004.
[9] Y. Liu, Y. Sun, F. Zeng, Y. Chen, Q. Li, B. Yu, W. Liu, Morphology, Crystallization, Thermal, and Mechanical Properties of
Poly(vinylidene fluoride) Films Filled with Different Concentrations of Polyhedral Oligomeric Silsesquioxane, Polymer Engineering
and Science, 2012. DOI 10.1002/pen.
[10] B. P. Mahale, D. Bodas, S. A. Gangal, "Development of low-cost poly(vinyldifluoride ) sensor for low- pressure application," Micro & Nano Letters, 2011, Vol. 6 (7), pp. 40-542.
- Citation
- Abstract
- Reference
- Full PDF
Abstract: CuAlS2 thin films of the same thickness are deposited on suitably cleaned coning 7059 glass
substrate by two stage vacuum thermal evaporation technique at room temperature and sulfurised at different
temperatures. The structural properties studied by means of XRD revealed that the films are of crystalline in
nature having tetragonal structure. For all the films the preferential orientation is [112]. The other orientations
like [220], [312] and [400] were also observed in the films depending upon the sulfurisation temperatures. The
values of lattice constants, grain size, micro strain and dislocation density of the films are calculated and the
values agree strongly with ICDD data. Visual inspection of (SEM) micrographs of the films showed that
crystallite size increase with increase in sulfurisation temperature.
Keywords: Dwell period, lattice parameters, Ramp rate, Sulfurisation, Thermal evaporation.
Keywords: Dwell period, lattice parameters, Ramp rate, Sulfurisation, Thermal evaporation.
[1] O. Madelung, Semiconductors Data Handbook. Springer- Verlag Berlin, Heidelberg, 2004.
[2] D.N. Okoli, A.J. Ekpunobi, and C.E. Okeke, Optical Properties of Chemical Bath deposited CuAlS2 Thin Films. The pacific Journal
of Science and Technology, 2006,7, 59-63.
[3] J.A. Tariq, J.A and A.J. Mushtak , Structure and optical properties of CuAlS2 Thin films by CBD, Turk. Journal of Physics, 34,
2010, 107- 116.
[4] C.O. El Moctara, K. Kambas, S. Marsillac, U.A. Anagnostopoulos, J.C. Bern`ede, and K. Benchouck, Optical Properties of
CuAlX2 (X= Se, Te) thin Films obtained by Annealing of Copper, Aluminum and Chalcogen layers sequentially deposited. Thin
Solid Films, 2000, 371.
[5] P.B. Ahirrao, S.R. Gosavi, S.S. Sanjay and R. S. Patil, Wide band gap Nanocrystalline CuSCN thin films deposited by Modified
Chemical Method. Archives of Physics Research. 2, 2011,: 29-33.
[6] T. Nishi, Preparation of CuAlS2 by Metal Organic Decomposition, Japanese Journal of Physics, 38, 1999, 626-628.
[7] R. Brini, G. Schmer, M. Kanzari, and B. Rezig, Study of Growth of CuAlS2 thin Films on Oriented Silicon (111), Journal of Solid
Thin Films,517, 2009, 2191-2194.
[8] M. Hidetone, Y. Michitaka, and S. Koichi, Vapor phase Epitaxy of CuAlS2 on CuGaS2 Substrate by the Iodine transport Method.
Journal of Crystal Growth, 153, 1995, 180-183.
[9] M. Abaab, A. S. Bouazzi, and B. Rezig, Competitive CuAlS2 Oxygen Gas sensor. Microelectronic Engineering, 51, 2000, 343-348.
[10] I. Illican, Y. Caglar, and M. Caglar, Structural, Morphological and ptical Properties of CuAlS2 thin films deposited by Spray
Pyrolisis, Journal of Optoelectronics and Advanced Materials, 10, 2008, 10.pment of low-cost poly(vinyldifluoride ) sensor for low- pressure application," Micro & Nano Letters, 2011, Vol. 6 (7), pp. 40-542.
[2] D.N. Okoli, A.J. Ekpunobi, and C.E. Okeke, Optical Properties of Chemical Bath deposited CuAlS2 Thin Films. The pacific Journal
of Science and Technology, 2006,7, 59-63.
[3] J.A. Tariq, J.A and A.J. Mushtak , Structure and optical properties of CuAlS2 Thin films by CBD, Turk. Journal of Physics, 34,
2010, 107- 116.
[4] C.O. El Moctara, K. Kambas, S. Marsillac, U.A. Anagnostopoulos, J.C. Bern`ede, and K. Benchouck, Optical Properties of
CuAlX2 (X= Se, Te) thin Films obtained by Annealing of Copper, Aluminum and Chalcogen layers sequentially deposited. Thin
Solid Films, 2000, 371.
[5] P.B. Ahirrao, S.R. Gosavi, S.S. Sanjay and R. S. Patil, Wide band gap Nanocrystalline CuSCN thin films deposited by Modified
Chemical Method. Archives of Physics Research. 2, 2011,: 29-33.
[6] T. Nishi, Preparation of CuAlS2 by Metal Organic Decomposition, Japanese Journal of Physics, 38, 1999, 626-628.
[7] R. Brini, G. Schmer, M. Kanzari, and B. Rezig, Study of Growth of CuAlS2 thin Films on Oriented Silicon (111), Journal of Solid
Thin Films,517, 2009, 2191-2194.
[8] M. Hidetone, Y. Michitaka, and S. Koichi, Vapor phase Epitaxy of CuAlS2 on CuGaS2 Substrate by the Iodine transport Method.
Journal of Crystal Growth, 153, 1995, 180-183.
[9] M. Abaab, A. S. Bouazzi, and B. Rezig, Competitive CuAlS2 Oxygen Gas sensor. Microelectronic Engineering, 51, 2000, 343-348.
[10] I. Illican, Y. Caglar, and M. Caglar, Structural, Morphological and ptical Properties of CuAlS2 thin films deposited by Spray
Pyrolisis, Journal of Optoelectronics and Advanced Materials, 10, 2008, 10.pment of low-cost poly(vinyldifluoride ) sensor for low- pressure application," Micro & Nano Letters, 2011, Vol. 6 (7), pp. 40-542.
