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| Paper Type | : | Research Paper |
| Title | : | Promising Application of Neodymium Oxide Nano Films in Microelectronics |
| Country | : | India |
| Authors | : | Arun Chandra Sarmah |
| : | 10.9790/4861-0140103 ![]() |
Abstract: The AC conduction mechanism of vacuum deposited Neodymium Oxide (Nd2O3) nano films with Aluminium top and counter electrodes were investigated at temperature range 302-528 K and within the thickness range 90-175 nm. The variations of capacitance (C) with frequency (0.06-50 kHz) at different temperatures were also observed. It was found that the capacitance was frequency dependent at all temperatures but almost independent in the high frequency range beyond 1 kHz. From the variation of dielectric loss (tanδ) with frequency it was seen that tanδ values decrease rapidly with frequency and attains a minimum value. The variation of C with T at various frequencies was also studied and was found that C almost remain constant almost upto 440 K and then increases sharply with temperature. At low frequencies C increases sharply with temperature. From the tanδ versus T characteristics at different frequencies it was observed that in the temperature range upto 460 K. tanδ almost remained constant but increased sharply with T at frequencies below 1 kHz or below. A non-linear variation of 1/C2 with voltage did not indicate the presence of Schottky barriers. Nd2O3 nano films show low capacitance density 0.0021 μF cm-2 and low dielectric loss 0.008 at 1 kHz and at 300 K. On account of stable properties, low dielectric loss and high dielectric constant the application of Nd2O3 nano films in electronic microcircuits will give promising result.
Keywords: AC conduction, activation energy, capacitance density, dielectric loss, dielectric constant
Keywords: AC conduction, activation energy, capacitance density, dielectric loss, dielectric constant
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- Abstract
- Reference
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Abstract: Measurement of radon, thoron concentration and their daughter products in a dwelling of Rampur city and in the surrounding villages were carried out by using Solid-state nuclear track detectors (LR-115 type II) in a bare mode. The detectors were distributed over 32 houses. The indoor radon concentration was found to vary with building material, ventilation condition, occupant's behaviour and mode of constructions of houses. The radon value was found to be lower than recommended value under normal ventilation condition. The indoor radon concentrations were found to vary from 30 Bqm-3 to 85.36Bqm-3 with an average value of 62.36 Bq/m3.This value is lower than the ICRP recommended values of 200Bqm-and thus are within safe limits. The outdoor radon concentration is usually low and less than average indoor levels. It is also found that, in general, the radon level in lower floors is higher than that in upper ones in all houses.
Key Words: Indoor radon concentration, SSNTD's, Annual Effective Dose, Uttar Pradesh, environment.
Key Words: Indoor radon concentration, SSNTD's, Annual Effective Dose, Uttar Pradesh, environment.
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[2]. Muramatsu H, Tashiro Y, Hasegawa N et al. Seasonal variations of Rn-222 concentrations in the air of a tunnel located in Nagano city. J Environ Radioact 2002: 60 (3): 263-274.
[3]. Kies A,Biell A, Rowlinson L etal.Investigation of the dynamics of indoor radon and radon progeny concentration Environ Int 1996; 22:S889-S904.
[4]. Riley WJ, Gadgil AJ,Bonnefoys YC etal.The effect of steady winds on radon-222 entry from soil into house.Atoms Environ 1996; 30 (7) 1167-1176.
[5]. Alter H.W. and Fleischer R.L. "Passive integrating radon monitor for environmental monitoring". Health Physics 40,693 (1981)
[6]. Eappen K.P. and Mayya Y.S. Calibration factor for LR-115 type-II based radon thoron discriminating dosimeter. Radiation measurement 38 (2004) 5-14.
[7]. ICRP (1987) Lung Cancer Risk for Indoor Exposure to Radon Daughters. ICRP Publications 50.pergamon press, Oxford.
[8]. UNSCEAR (1982) Ionizing radiations: Sources and biological effects. United Nations Publication No.E.82.IX.8, New York.
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- Abstract
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| Paper Type | : | Research Paper |
| Title | : | Design of OTA-C Active Low Pass Filter Using Multiple OTA's |
| Country | : | India |
| Authors | : | Rajeshwari S. Mathad, M. M. Mutsaddi, S. V. Halse |
| : | 10.9790/4861-0140812 ![]() |
Abstract: The studies are carried out on OTA-C active filter using single OTA-C and multiple OTA-C filter . The multiple OTA-C filters have the advantage of tuning the floating inductor resulting in enhancement of gain and increase in cut-off frequency with increase in bias current. Different cases of tuning transconductance gm1, gm1, gm , and gm2 by changing the bias currents of multiple OTA 's are studied and results are discussed. The only one method of setting of gm1 gm1 greater than gmgm2 is an innovative in changing the cut off frequency as we have flexible tuning transconductances of gm1, gm1, gm and gm2 . Results are consistent and are encouraging in respect of tuning of transconductance with bias current under the condition of gm1 gm1 greater than gmgm2 . However an OTA-C active filter other than the studied criteria has the limitations in designing of filters.
Keywords: OTA Operational Transconductance Amplifier OTA-C Operational Transconductance Amplifier – Capacitance
Keywords: OTA Operational Transconductance Amplifier OTA-C Operational Transconductance Amplifier – Capacitance
[1] Achim Gratz "Operational Transconductance Amplifiers" http://Synth.Stromeko.net/diy/OTA.pdf.
[2] Prasant K. Mahapatra, Manjeet Singh and Neelesh Kumar "Realization of Active Filters Using Operational Transconductance Amplifier (OTA)" J. Instrum. Soc. India 35(1) 1-9
[3] Neha Gupta , Meenakshi Suthar, Sapna Singh, Priyanka Soni "Active Filter Design Using Two OTA based Floating Inductance Simulator" International Journal of VLSI & Signal Processing Applications, Vol.2,Issue 1, Feb 2012, (47-50), ISSN 2231-3133 (Online)
[4] Hwang.Y.S, Liu.S.I, Wu.D.S, Wu.Y.P "Table_based linear transformation filter using OTA-C techniques" Electronics LETTERS vol.30 No.24 pp,1-2.,1994.
[5] A.M Soliman, "A Grounded Inductance Simulation Using the DVCCS/DVCVS", Proc. IEEE,Vol. 66 pp 1089-1091, Sep 1978.
[6] Y. Sun, Design of high frequency integrated analogue filters. London:IEE Press, 2002
[7] A.M Soliman, "A Grounded Inductance Simulation Using the DVCCS/DVCVS", Proc. IEEE,Vol. 66 pp 1089-1091, Sep 1978.
[8] A. Thanachayanon, "CMOS Floating Active Inductor and Its Applications to Bandpass Filter and Oscillator Design," lEE Proc. Circuits Devices Syst. , vol. 147, lEE, pp.. 42-48,2000.
[9] Koomagaew C, Petchmaneelumka W, Riewruja V, "OTA based Floating Inductance Simulator", ICCAS-SICE, pp 857-860, Aug. 2009.
[10] National Semiconductor, Application Note, LM 13600 Dual Operational Transconductance Amplifiers with Linearizing Diodes and Buffers", Feb. 1995
[2] Prasant K. Mahapatra, Manjeet Singh and Neelesh Kumar "Realization of Active Filters Using Operational Transconductance Amplifier (OTA)" J. Instrum. Soc. India 35(1) 1-9
[3] Neha Gupta , Meenakshi Suthar, Sapna Singh, Priyanka Soni "Active Filter Design Using Two OTA based Floating Inductance Simulator" International Journal of VLSI & Signal Processing Applications, Vol.2,Issue 1, Feb 2012, (47-50), ISSN 2231-3133 (Online)
[4] Hwang.Y.S, Liu.S.I, Wu.D.S, Wu.Y.P "Table_based linear transformation filter using OTA-C techniques" Electronics LETTERS vol.30 No.24 pp,1-2.,1994.
[5] A.M Soliman, "A Grounded Inductance Simulation Using the DVCCS/DVCVS", Proc. IEEE,Vol. 66 pp 1089-1091, Sep 1978.
[6] Y. Sun, Design of high frequency integrated analogue filters. London:IEE Press, 2002
[7] A.M Soliman, "A Grounded Inductance Simulation Using the DVCCS/DVCVS", Proc. IEEE,Vol. 66 pp 1089-1091, Sep 1978.
[8] A. Thanachayanon, "CMOS Floating Active Inductor and Its Applications to Bandpass Filter and Oscillator Design," lEE Proc. Circuits Devices Syst. , vol. 147, lEE, pp.. 42-48,2000.
[9] Koomagaew C, Petchmaneelumka W, Riewruja V, "OTA based Floating Inductance Simulator", ICCAS-SICE, pp 857-860, Aug. 2009.
[10] National Semiconductor, Application Note, LM 13600 Dual Operational Transconductance Amplifiers with Linearizing Diodes and Buffers", Feb. 1995
