Abstract: We have been prepared Semiconducting oxide material like TiO2, SiO2, TiO2-SiO2 and TiO2/SiO2 thin films for taken different composition by using hydrothermal method. All these elements were deposited on the glass substrate. In this films are acted on the p and n type working with the majority carrier are recombination of electron and hole .This material is N type but it will acted p-type Ti and Si. Thin films were Characterized by scanning electron microscope (SEM), X-ray diffraction (XRD), and UV. From the UV Studies we have analysis the energy gap (Eg), refractive index (n) and extinction co efficient.
Keywords: TiO2, SiO2, TiO2-SiO2 and TiO2/SiO2 thin films, XRD, UV and SEM
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